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ICP and ICPsm process development, a) dry strip only, b) low temperature SiC oxidation removal
Publication:
ICP and ICPsm process development, a) dry strip only, b) low temperature SiC oxidation removal
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Date
1999
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Boullart, Werner
;
Mannaert, Geert
;
Baklanov, Mikhaïl
;
Shamiryam, D.
;
Vanhaelemeersch, Serge
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Abstract
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2080
since deposited on 2021-10-06
Acq. date: 2026-01-08
Citations
Metrics
Views
2080
since deposited on 2021-10-06
Acq. date: 2026-01-08
Citations