Energy barriers between (100)Si and Al2O3 and ZrO2-based dielectric stacks: internal electron photoemission measurements

dc.contributor.author	Afanas'ev, V. V.
dc.contributor.author	Houssa, Michel
dc.contributor.author	Stesmans, Andre
dc.contributor.author	Adriaenssens, G. J.
dc.contributor.author	Heyns, Marc
dc.contributor.imecauthor	Houssa, Michel
dc.contributor.imecauthor	Stesmans, Andre
dc.contributor.imecauthor	Heyns, Marc
dc.contributor.orcidimec	Houssa, Michel::0000-0003-1844-3515
dc.date.accessioned	2021-10-14T16:36:07Z
dc.date.available	2021-10-14T16:36:07Z
dc.date.issued	2001
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/5007
dc.source.beginpage	335
dc.source.endpage	340
dc.source.issue	1_4
dc.source.journal	Microelectronic Engineering
dc.source.volume	59
dc.title	Energy barriers between (100)Si and Al2O3 and ZrO2-based dielectric stacks: internal electron photoemission measurements
dc.type	Journal article
dspace.entity.type	Publication
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