Publication:
Deep levels in heat-treated and 252Cf-irradiated P-type silicon substrates with different oxygen content
Date
dc.contributor.author | Kaniava, Arvydas | |
dc.contributor.author | Vanhellemont, Jan | |
dc.contributor.author | Simoen, Eddy | |
dc.contributor.author | Claeys, Cor | |
dc.contributor.imecauthor | Simoen, Eddy | |
dc.contributor.orcidimec | Simoen, Eddy::0000-0002-5218-4046 | |
dc.date.accessioned | 2021-09-29T12:42:38Z | |
dc.date.available | 2021-09-29T12:42:38Z | |
dc.date.issued | 1994 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/213 | |
dc.source.beginpage | 1474 | |
dc.source.endpage | 1479 | |
dc.source.journal | Semiconductor Science and Technology | |
dc.source.volume | 9 | |
dc.title | Deep levels in heat-treated and 252Cf-irradiated P-type silicon substrates with different oxygen content | |
dc.type | Journal article | |
dspace.entity.type | Publication | |
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