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XPS study of the cleaning efficiency by ozone processes of protective films formed by reactive ion etching of Co and Ti silicides

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dc.contributor.authorConard, Thierry
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorBaklanov, Mikhaïl
dc.contributor.authorVos, Rita
dc.contributor.authorHeyns, Marc
dc.contributor.authorVandervorst, Wilfried
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorVos, Rita
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-06T10:49:32Z
dc.date.available2021-10-06T10:49:32Z
dc.date.embargo9999-12-31
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3310
dc.source.beginpage139
dc.source.conferenceUltra Clean Processing of Silicon Surfaces; Proceedings of the 4th International Symposium on Ultra Clean Processing of Silicon
dc.source.conferencedate21/09/1998
dc.source.conferencelocationOostende Belgium
dc.source.endpage142
dc.title

XPS study of the cleaning efficiency by ozone processes of protective films formed by reactive ion etching of Co and Ti silicides

dc.typeProceedings paper
dspace.entity.typePublication
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