Publication:
Multi-gate fin field-effect transistors junctions optimization by conventional ion implantation for (Sub-)22 nm technology nodes circuit applications
Date
| dc.contributor.author | Veloso, Anabela | |
| dc.contributor.author | De Keersgieter, An | |
| dc.contributor.author | Brus, Stephan | |
| dc.contributor.author | Horiguchi, Naoto | |
| dc.contributor.author | Absil, Philippe | |
| dc.contributor.author | Hoffmann, Thomas Y. | |
| dc.contributor.imecauthor | Veloso, Anabela | |
| dc.contributor.imecauthor | De Keersgieter, An | |
| dc.contributor.imecauthor | Brus, Stephan | |
| dc.contributor.imecauthor | Horiguchi, Naoto | |
| dc.contributor.imecauthor | Absil, Philippe | |
| dc.contributor.orcidimec | De Keersgieter, An::0000-0002-5527-8582 | |
| dc.contributor.orcidimec | Horiguchi, Naoto::0000-0001-5490-0416 | |
| dc.date.accessioned | 2021-10-19T20:55:09Z | |
| dc.date.available | 2021-10-19T20:55:09Z | |
| dc.date.issued | 2011 | |
| dc.identifier.issn | 0021-4922 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/20046 | |
| dc.identifier.url | http://jjap.jsap.jp/link?JJAP/50/04DC16/ | |
| dc.source.beginpage | 04DC16-1 | |
| dc.source.issue | 4 | |
| dc.source.journal | Japanese Journal of Applied Physics | |
| dc.source.volume | 50 | |
| dc.title | Multi-gate fin field-effect transistors junctions optimization by conventional ion implantation for (Sub-)22 nm technology nodes circuit applications | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
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