Publication:

Thermal recovery process of electron irradiated Si1-xCx source/drain n-MOSFETs

Date

2015
Journal article
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dc.contributor.authorTakakura, Kenichiro
dc.contributor.authorMori, Masato
dc.contributor.authorYoneoka, Masashi
dc.contributor.authorTsunoda, Isao
dc.contributor.authorNakashima, Toshiyuki
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorTakakura, Kenichiro
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-22T23:25:21Z
dc.date.available2021-10-22T23:25:21Z
dc.date.issued2015
dc.identifier.issn1610-1634
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25977
dc.identifier.urlhttp://onlinelibrary.wiley.com/doi/10.1002/pssc.201510088/abstract
dc.source.beginpage1405
dc.source.endpage1408
dc.source.issue12
dc.source.journalPhysica Status Solidi C
dc.source.volume12
dc.title

Thermal recovery process of electron irradiated Si1-xCx source/drain n-MOSFETs

dc.typeJournal article
dspace.entity.typePublication
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