Publication:

New stress activation method for kerfless silicon wafering using Ag/Al and epoxy stress-inducing layers

Date

2014
Journal article
Simple item page Full metadata Statistics
 
dc.contributor.authorBellanger, Pierre
dc.contributor.authorCenteno Brito, Miguel
dc.contributor.authorPera, David M.
dc.contributor.authorCosta, Ivo
dc.contributor.authorGaspar, Guilherme
dc.contributor.authorMartini, Roberto
dc.contributor.authorDebucquoy, Maarten
dc.contributor.authorSerra, Joao M.
dc.contributor.imecauthorDebucquoy, Maarten
dc.contributor.orcidimecDebucquoy, Maarten::0000-0001-5980-188X
dc.date.accessioned2021-10-22T00:45:35Z
dc.date.available2021-10-22T00:45:35Z
dc.date.embargo9999-12-31
dc.date.issued2014
dc.identifier.issn2156-3381
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23531
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/abstractAuthors.jsp?reload=true&arnumber=6862848
dc.source.beginpage1228
dc.source.endpage1234
dc.source.issue5
dc.source.journalIEEE Journal of Photovoltaics
dc.source.volume4
dc.title

New stress activation method for kerfless silicon wafering using Ag/Al and epoxy stress-inducing layers

dc.typeJournal article
dspace.entity.typePublication
Files

Original bundle

Name:
30811.pdf
Size:
530.48 KB
Format:
Adobe Portable Document Format
Download
Publication available in collections:
Articles