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Assessment of a MOSFET circuit model as a tool for device design down to 0.05 μm

Date

1997
Proceedings Paper
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dc.contributor.authorBiesemans, Serge
dc.contributor.authorDe Meyer, Kristin
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.imecauthorDe Meyer, Kristin
dc.date.accessioned2021-09-30T07:56:51Z
dc.date.available2021-09-30T07:56:51Z
dc.date.embargo9999-12-31
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1735
dc.source.beginpage305
dc.source.conferenceTechnical Digest of the International Conference on Simulation of Semiconductor Processes and Devices - SISPAD '97
dc.source.conferencedate8/09/1997
dc.source.conferencelocationCambridge, MA USA
dc.source.endpage307
dc.title

Assessment of a MOSFET circuit model as a tool for device design down to 0.05 μm

dc.typeProceedings paper
dspace.entity.typePublication
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