Electrical characterization of flexible InGaZnO transistors and 8-b transponder chip down to a bending radius of 2 mm

dc.contributor.author	Tripathi, Ashutosh
dc.contributor.author	Myny, Kris
dc.contributor.author	Bo, Hou
dc.contributor.author	Wezenberg, Kimberley
dc.contributor.author	Gelinck, Gerwin
dc.contributor.imecauthor	Myny, Kris
dc.contributor.orcidimec	Myny, Kris::0000-0002-5230-495X
dc.date.accessioned	2021-10-22T23:40:04Z
dc.date.available	2021-10-22T23:40:04Z
dc.date.embargo	9999-12-31
dc.date.issued	2015
dc.identifier.issn	0018-9383
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/26008
dc.identifier.url	http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7323805
dc.source.beginpage	4063
dc.source.endpage	4068
dc.source.issue	12
dc.source.journal	IEEE Transactions on Electron Devices
dc.source.volume	62
dc.title	Electrical characterization of flexible InGaZnO transistors and 8-b transponder chip down to a bending radius of 2 mm
dc.type	Journal article
dspace.entity.type	Publication
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