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Specific features of multi-gate MOSFET threshold voltage and subthreshold slope behavior at high temperatures

Date

2007
Journal article
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dc.contributor.authorKilchytska, Valeria
dc.contributor.authorCollaert, Nadine
dc.contributor.authorJurczak, Gosia
dc.contributor.authorFlandre, Denis
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-16T17:05:42Z
dc.date.available2021-10-16T17:05:42Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12395
dc.source.beginpage1185
dc.source.endpage1193
dc.source.issue9
dc.source.journalSolid-State Electronics
dc.source.volume51
dc.title

Specific features of multi-gate MOSFET threshold voltage and subthreshold slope behavior at high temperatures

dc.typeJournal article
dspace.entity.typePublication
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