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Investigation of the Impact of Hot-Carrier-Induced Interface State Generation on Carrier Mobility in nMOSFET

 
dc.contributor.authorWu, Zhicheng
dc.contributor.authorFranco, Jacopo
dc.contributor.authorTruijen, Brecht
dc.contributor.authorRoussel, Philippe
dc.contributor.authorKaczer, Ben
dc.contributor.authorLinten, Dimitri
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorWu, Zhicheng
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorTruijen, Brecht
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecTruijen, Brecht::0000-0002-2288-1414
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.date.accessioned2022-05-06T09:52:11Z
dc.date.available2021-11-02T16:00:30Z
dc.date.available2022-05-05T08:28:40Z
dc.date.available2022-05-06T09:52:11Z
dc.date.issued2021
dc.identifier.doi10.1109/TED.2021.3080657
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/37838
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage3246
dc.source.endpage3253
dc.source.issue7
dc.source.journalIEEE TRANSACTIONS ON ELECTRON DEVICES
dc.source.numberofpages8
dc.source.volume68
dc.subject.keywordsELECTRON-MOBILITY
dc.subject.keywordsDEGRADATION
dc.subject.keywordsSIMULATION
dc.subject.keywordsVOLTAGE
dc.subject.keywordsMODEL
dc.title

Investigation of the Impact of Hot-Carrier-Induced Interface State Generation on Carrier Mobility in nMOSFET

dc.typeJournal article
dspace.entity.typePublication
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