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Comparison of a bottom-up and a top-down approach for the creation of contact openings in a multi-stack oxide layer at the front interface of Cu(In, Ga)Se-2

 
dc.contributor.authorBuldu, Dilara Gokcen
dc.contributor.authorde Wild, Jessica
dc.contributor.authorKohl, Thierry
dc.contributor.authorBirant, Gizem
dc.contributor.authorBrammertz, Guy
dc.contributor.authorMeuris, Marc
dc.contributor.authorPoortmans, Jef
dc.contributor.authorVermang, Bart
dc.contributor.imecauthorBuldu, Dilara Gokcen
dc.contributor.imecauthorde Wild, Jessica
dc.contributor.imecauthorKohl, Thierry
dc.contributor.imecauthorBirant, Gizem
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.imecauthorVermang, Bart
dc.contributor.orcidimecde Wild, Jessica::0000-0003-2291-4674
dc.contributor.orcidimecKohl, Thierry::0000-0002-8232-0598
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.contributor.orcidimecVermang, Bart::0000-0003-2669-2087
dc.contributor.orcidimecBirant, Gizem::0000-0003-0496-8150
dc.contributor.orcidimecBuldu, Dilara Gokcen::0000-0003-0660-043X
dc.date.accessioned2023-03-24T10:03:43Z
dc.date.available2022-05-30T02:21:25Z
dc.date.available2023-03-24T10:03:43Z
dc.date.issued2022
dc.description.wosFundingTextThis work received funding from the European Union's H2020 research and innovation program under grant agreement No. 715027.
dc.identifier.doi10.1016/j.solener.2022.04.003
dc.identifier.issn0038-092X
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/39908
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD
dc.source.beginpage161
dc.source.endpage172
dc.source.issueMay
dc.source.journalSOLAR ENERGY
dc.source.numberofpages12
dc.source.volume237
dc.subject.keywordsREAR SURFACE PASSIVATION
dc.subject.keywordsTIME-RESOLVED PHOTOLUMINESCENCE
dc.subject.keywordsCU(IN,GA)SE-2 SOLAR-CELLS
dc.subject.keywordsTHIN-FILMS
dc.subject.keywordsEFFICIENCY
dc.title

Comparison of a bottom-up and a top-down approach for the creation of contact openings in a multi-stack oxide layer at the front interface of Cu(In, Ga)Se-2

dc.typeJournal article
dspace.entity.typePublication
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