Publication:
A D-band Power-Combined Stacked Common-Base Power Amplifier Achieving 20.9 dBm Psat and 24.3 % PAE in a 250-nm InP HBT Technology
| dc.contributor.author | Hemelhof, Arno | |
| dc.contributor.author | Park, Sehoon | |
| dc.contributor.author | Zhang, Yang | |
| dc.contributor.author | Ingels, Mark | |
| dc.contributor.author | Gramegna, Giuseppe | |
| dc.contributor.author | Vaesen, Kristof | |
| dc.contributor.author | Yan, Dongyang | |
| dc.contributor.author | Wambacq, Piet | |
| dc.contributor.imecauthor | Hemelhof, Arno | |
| dc.contributor.imecauthor | Zhang, Yang | |
| dc.contributor.imecauthor | Ingels, Mark | |
| dc.contributor.imecauthor | Gramegna, Giuseppe | |
| dc.contributor.imecauthor | Vaesen, Kristof | |
| dc.contributor.imecauthor | Yan, Dongyang | |
| dc.contributor.imecauthor | Wambacq, Piet | |
| dc.contributor.orcidimec | Hemelhof, Arno::0000-0002-7050-8024 | |
| dc.contributor.orcidimec | Zhang, Yang::0000-0002-1540-2462 | |
| dc.contributor.orcidimec | Ingels, Mark::0000-0003-1939-2422 | |
| dc.contributor.orcidimec | Gramegna, Giuseppe::0009-0004-3430-6419 | |
| dc.contributor.orcidimec | Vaesen, Kristof::0000-0001-9971-3593 | |
| dc.contributor.orcidimec | Yan, Dongyang::0000-0002-2048-3762 | |
| dc.contributor.orcidimec | Wambacq, Piet::0000-0003-4388-7257 | |
| dc.date.accessioned | 2025-07-29T13:47:46Z | |
| dc.date.available | 2025-06-28T03:55:59Z | |
| dc.date.available | 2025-07-29T13:47:46Z | |
| dc.date.issued | 2024 | |
| dc.description.wosFundingText | This work is supported by the Research Foundation - Flanders (FWO) project 1SH6T24N. | |
| dc.identifier.doi | 10.1109/BCICTS59662.2024.10745714 | |
| dc.identifier.eisbn | 979-8-3315-4124-8 | |
| dc.identifier.isbn | 979-8-3315-4125-5 | |
| dc.identifier.issn | 2831-4972 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/45854 | |
| dc.publisher | IEEE | |
| dc.source.beginpage | 185 | |
| dc.source.conference | 2024 Bipolar Complemetary Metal-Oxide Semiconductor and Compound Semiconductor Integrated Circuits and Technology Symposium | |
| dc.source.conferencedate | OCT 27-30, 2024 | |
| dc.source.conferencelocation | Fort Lauderdale | |
| dc.source.endpage | 188 | |
| dc.source.journal | N/A | |
| dc.source.numberofpages | 4 | |
| dc.title | A D-band Power-Combined Stacked Common-Base Power Amplifier Achieving 20.9 dBm Psat and 24.3 % PAE in a 250-nm InP HBT Technology | |
| dc.type | Proceedings paper | |
| dspace.entity.type | Publication | |
| Files | ||
| Publication available in collections: |