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Dual threshold diode based on the superconductor-to-insulator transition in ultrathin TiN films

Date

2013
Journal article
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dc.contributor.authorBaturina, T.
dc.contributor.authorKalok, D.
dc.contributor.authorBilusic, A.
dc.contributor.authorVinokur, V.
dc.contributor.authorBaklanov, Mikhaïl
dc.contributor.authorGutakovski, A.
dc.contributor.authorLatyshev, A.
dc.contributor.authorStrunk, C.
dc.date.accessioned2021-10-21T06:44:46Z
dc.date.available2021-10-21T06:44:46Z
dc.date.embargo9999-12-31
dc.date.issued2013
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22021
dc.source.beginpage42601
dc.source.issue4
dc.source.journalApplied Physics Letters
dc.source.volume102
dc.title

Dual threshold diode based on the superconductor-to-insulator transition in ultrathin TiN films

dc.typeJournal article
dspace.entity.typePublication
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