Publication:

Two-dimensional materials prospects for non-volatile spintronic memories

 
dc.contributor.authorYang, Hyunsoo
dc.contributor.authorValenzuela, Sergio O.
dc.contributor.authorChshiev, Mairbek
dc.contributor.authorCouet, Sebastien
dc.contributor.authorDieny, Bernard
dc.contributor.authorDlubak, Bruno
dc.contributor.authorFert, Albert
dc.contributor.authorGarello, Kevin
dc.contributor.authorJamet, Matthieu
dc.contributor.authorJeong, Dae-Eun
dc.contributor.authorLee, Kangho
dc.contributor.authorLee, Taeyoung
dc.contributor.authorMartin, Marie-Blandine
dc.contributor.authorKar, Gouri Sankar
dc.contributor.authorSeneor, Pierre
dc.contributor.authorShin, Hyeon-Jin
dc.contributor.authorRoche, Stephan
dc.contributor.imecauthorCouet, Sebastien
dc.contributor.imecauthorGarello, Kevin
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.orcidextChshiev, Mairbek::0000-0001-9232-7622
dc.contributor.orcidextDlubak, Bruno::0000-0001-5696-8991
dc.contributor.orcidextFert, Albert::0000-0003-0670-8539
dc.contributor.orcidextJamet, Matthieu::0000-0002-8247-4677
dc.contributor.orcidextJeong, Dae-Eun::0000-0002-9229-4717
dc.contributor.orcidextRoche, Stephan::0000-0003-0323-4665
dc.contributor.orcidimecGarello, Kevin::0000-0003-0236-322X
dc.contributor.orcidimecCouet, Sebastien::0000-0001-6436-9593
dc.date.accessioned2023-05-04T13:00:36Z
dc.date.available2023-05-04T13:00:36Z
dc.date.embargo2022-12-22
dc.date.issued2022
dc.description.wosFundingTextM.C., S.C., B.D., A.F., K.G., M.-B. M., P.S., S.O.V. and S.R. acknowledge the European Union Horizon 2020 research and innovation programme for grant number 881603 (Graphene Flagship). The Catalan Institute of Nanoscience and Nanotechnology is supported by the Severo Ochoa Centres of Excellence programme, funded by the Spanish Research Agency (AEI, grant number SEV-2017-0706). S.O.V. thanks the European Research Council (ERC) under grant agreements 306652 SPINBOUND and 899896 SOTMEM, and the Spanish Research Agency (AEI), Ministry of Science and Innovation (PID2019-111773RB-I00/AEI/10.13039/501100011033). H.Y. is supported by SpOT-LITE programme (A*STAR grant, A18A6b0057) through RIE2020 funds, Singapore Ministry of Education (MOE) Tier 2 (R-263-000-E29-112), National Research Foundation (NRF) Singapore Investigatorship (NRFI06-2020-0015) and Samsung Electronics' University R&D programme. S.C. and G.S.K. acknowledge IMEC's Industrial Affiliation Program on MRAM devices. M.C. and M.J. acknowledge the French National Research Agency through the MAGICVALLEY project (ANR-18-CE24-0007). B. Dieny acknowledges ERC MAGICAL 669204. M.C. acknowledges H. X. Yang, A. Hallal and F. Ibrahim. P.S. and B. Dlubak acknowledge the French National Research Agency through the SoGraphMem project (ANR-18-CE24-0007).
dc.identifier.doi10.1038/s41586-022-04768-0
dc.identifier.issn0028-0836
dc.identifier.pmidMEDLINE:35732761
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/41557
dc.publisherNATURE PORTFOLIO
dc.source.beginpage663
dc.source.endpage673
dc.source.issue7915
dc.source.journalNATURE
dc.source.numberofpages11
dc.source.volume606
dc.subject.keywordsSPIN-ORBIT TORQUE
dc.subject.keywordsHEXAGONAL BORON-NITRIDE
dc.subject.keywordsTUNNEL-JUNCTIONS
dc.subject.keywordsLARGE MAGNETORESISTANCE
dc.subject.keywordsMAGNETIC-ANISOTROPY
dc.subject.keywordsEPITAXIAL-GROWTH
dc.subject.keywordsROOM-TEMPERATURE
dc.subject.keywordsGRAPHENE FILMS
dc.subject.keywordsATOMIC LAYERS
dc.subject.keywordsMONOLAYER
dc.title

Two-dimensional materials prospects for non-volatile spintronic memories

dc.typeJournal article
dspace.entity.typePublication
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