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High-Density Nanopatterning of SiGeAsTe Chalcogenide as Ovonic Threshold Switch Selectors for Memory Applications

 
dc.contributor.authorKundu, Shreya
dc.contributor.authorGarbin, Daniele
dc.contributor.authorDevulder, Wouter
dc.contributor.authorDonadio, Gabriele Luca
dc.contributor.authorLazzarino, Frederic
dc.contributor.imecauthorKundu, Shreya
dc.contributor.imecauthorGarbin, Daniele
dc.contributor.imecauthorDevulder, Wouter
dc.contributor.imecauthorDonadio, Gabriele Luca
dc.contributor.imecauthorLazzarino, Frederic
dc.contributor.orcidimecKundu, Shreya::0000-0001-8052-7774
dc.contributor.orcidimecGarbin, Daniele::0000-0002-5884-1043
dc.contributor.orcidimecDevulder, Wouter::0000-0002-5156-0177
dc.contributor.orcidimecLazzarino, Frederic::0000-0001-7961-9727
dc.contributor.orcidimecDonadio, Gabriele Luca::0000-0003-1435-3897
dc.date.accessioned2023-08-24T12:50:49Z
dc.date.available2023-07-20T17:16:30Z
dc.date.available2023-08-24T12:50:49Z
dc.date.issued2023
dc.description.wosFundingTextWe acknowledge the support of IMEC's Industrial Affiliation Program (IIAP) and the Active memory program. The authors would like to thank Ludovic Goux, Gouri Sankar Kar, and Romain Delhougne of the Active memory program, IMEC for providing a brief overview of the intended applications and integration of chalcogenide-based OTS devices. We also acknowledge the support of IMEC's pilot line, SEM, and MCA team for help with fabrication and characterization processes.
dc.identifier.doi10.1021/acsanm.3c01611
dc.identifier.issn2574-0970
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/42179
dc.publisherAMER CHEMICAL SOC
dc.source.beginpage10668
dc.source.endpage10679
dc.source.issue12
dc.source.journalACS APPLIED NANO MATERIALS
dc.source.numberofpages12
dc.source.volume6
dc.subject.keywordsETCHING CHARACTERISTICS
dc.subject.keywordsTHIN-FILMS
dc.title

High-Density Nanopatterning of SiGeAsTe Chalcogenide as Ovonic Threshold Switch Selectors for Memory Applications

dc.typeJournal article
dspace.entity.typePublication
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