Publication:

TaN versus TiN metal gate input/output pMOSFETs: a low-frequency noise perspective

Date

2018
Journal article
Simple item page Full metadata Statistics
 
dc.contributor.authorSimoen, Eddy
dc.contributor.authorO'Sullivan, Barry
dc.contributor.authorRitzenthaler, Romain
dc.contributor.authorDentoni Litta, Eugenio
dc.contributor.authorSchram, Tom
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorO'Sullivan, Barry
dc.contributor.imecauthorRitzenthaler, Romain
dc.contributor.imecauthorDentoni Litta, Eugenio
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecO'Sullivan, Barry::0000-0002-9036-8241
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2021-10-26T03:56:47Z
dc.date.available2021-10-26T03:56:47Z
dc.date.embargo9999-12-31
dc.date.issued2018
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31787
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8430549
dc.source.beginpage3676
dc.source.endpage3681
dc.source.issue9
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume65
dc.title

TaN versus TiN metal gate input/output pMOSFETs: a low-frequency noise perspective

dc.typeJournal article
dspace.entity.typePublication
Files

Original bundle

Name:
38469.pdf
Size:
1.46 MB
Format:
Adobe Portable Document Format
Download
Publication available in collections:
Articles