Publication:

CV Stretch-Out Correction after Bias Temperature Stress: Work-function Dependence of Donor-/Acceptor-like Traps, Fixed Charges, and Fast States

Date

2021
Proceedings Paper
https://doi.org/10.1109/IRPS46558.2021.9405184
Simple item page Full metadata Statistics
 
dc.contributor.authorGrasser, T.
dc.contributor.authorO'Sullivan, Barry
dc.contributor.authorKaczer, Ben
dc.contributor.authorFranco, Jacopo
dc.contributor.authorStampfer, B.
dc.contributor.authorWaltl, M.
dc.contributor.imecauthorO'Sullivan, Barry
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.orcidimecO'Sullivan, Barry::0000-0002-9036-8241
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.date.accessioned2021-12-07T08:16:08Z
dc.date.available2021-11-02T15:58:32Z
dc.date.available2021-12-07T08:16:08Z
dc.date.issued2021
dc.identifier.doi10.1109/IRPS46558.2021.9405184
dc.identifier.eisbn978-1-7281-6893-7
dc.identifier.issn1541-7026
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/37691
dc.publisherIEEE
dc.source.conferenceIEEE International Reliability Physics Symposium (IRPS)
dc.source.conferencedateMAR 21-24, 2021
dc.source.conferencelocationMonterey, CA, USA
dc.source.journalna
dc.source.numberofpages6
dc.subject.keywordsFIELD-EFFECT TRANSISTORS
dc.subject.keywordsNBTI DEGRADATION
dc.subject.keywordsINSTABILITY
dc.subject.keywordsPBTI
dc.subject.keywordsRELIABILITY
dc.subject.keywordsFRAMEWORK
dc.subject.keywordsIMPACT
dc.title

CV Stretch-Out Correction after Bias Temperature Stress: Work-function Dependence of Donor-/Acceptor-like Traps, Fixed Charges, and Fast States

dc.typeProceedings paper
dspace.entity.typePublication
Files
Publication available in collections:
Conference contributions