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Modeling the impact of reset depth on vacancy-induced filament perturbations in HfO2 RRAM
Publication:
Modeling the impact of reset depth on vacancy-induced filament perturbations in HfO2 RRAM
Date
2013
Journal article
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Raghavan, Naga
;
Degraeve, Robin
;
Fantini, Andrea
;
Goux, Ludovic
;
Wouters, Dirk
;
Groeseneken, Guido
;
Jurczak, Gosia
Journal
IEEE Electron Device Letters
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1890
since deposited on 2021-10-21
Acq. date: 2025-10-29
Citations
Metrics
Views
1890
since deposited on 2021-10-21
Acq. date: 2025-10-29
Citations