Publication:

Enhanced active P doping by using high order Ge precursors leading to intense photoluminescence

Date

2016
Journal article
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dc.contributor.authorShimura, Yosuke
dc.contributor.authorSrinivasan, Ashwyn
dc.contributor.authorVan Thourhout, Dries
dc.contributor.authorVan Deun, Rik
dc.contributor.authorPantouvaki, Marianna
dc.contributor.authorVan Campenhout, Joris
dc.contributor.authorLoo, Roger
dc.contributor.imecauthorSrinivasan, Ashwyn
dc.contributor.imecauthorVan Thourhout, Dries
dc.contributor.imecauthorPantouvaki, Marianna
dc.contributor.imecauthorVan Campenhout, Joris
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecVan Thourhout, Dries::0000-0003-0111-431X
dc.contributor.orcidimecVan Campenhout, Joris::0000-0003-0778-2669
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-23T14:51:53Z
dc.date.available2021-10-23T14:51:53Z
dc.date.issued2016
dc.identifier.issn0040-6090
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27304
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0040609015007415
dc.source.beginpage56
dc.source.endpage59
dc.source.journalThin Solid Films
dc.source.volume602
dc.title

Enhanced active P doping by using high order Ge precursors leading to intense photoluminescence

dc.typeJournal article
dspace.entity.typePublication
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