Publication:

Hf cap thickness dependence in bipolar-switching TiN\HfO2\Hf\TiN RRAM device

Date

2012
Meeting abstract
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dc.contributor.authorChen, Yangyin
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorClima, Sergiu
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorGoux, Ludovic
dc.contributor.authorFantini, Andrea
dc.contributor.authorDegraeve, Robin
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorWouters, Dirk
dc.contributor.authorJurczak, Gosia
dc.contributor.imecauthorChen, Yangyin
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorClima, Sergiu
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorFantini, Andrea
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecClima, Sergiu::0000-0002-4044-9975
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.accessioned2021-10-20T10:15:39Z
dc.date.available2021-10-20T10:15:39Z
dc.date.embargo9999-12-31
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20447
dc.source.beginpage2806
dc.source.conference222nd ECS Fall Meeting
dc.source.conferencedate7/10/2012
dc.source.conferencelocationHonolulu, HI USA
dc.title

Hf cap thickness dependence in bipolar-switching TiN\HfO2\Hf\TiN RRAM device

dc.typeMeeting abstract
dspace.entity.typePublication
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