Impact of the gradient of the non-equilibrium point defect concentration on the dopant flux in silicon

dc.contributor.author	Kol'dyaev, Victor
dc.date.accessioned	2021-09-29T13:08:28Z
dc.date.available	2021-09-29T13:08:28Z
dc.date.embargo	9999-12-31
dc.date.issued	1995
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/706
dc.source.beginpage	125
dc.source.conference	18th International Semiconductor Conference. CAS'95 Proceedings
dc.source.conferencedate	10/10/1995
dc.source.conferencelocation	Sinaia Romania
dc.source.endpage	128
dc.title	Impact of the gradient of the non-equilibrium point defect concentration on the dopant flux in silicon
dc.type	Proceedings paper
dspace.entity.type	Publication
Files	Original bundle Name: 679.pdf Size: 364.75 KB Format: Adobe Portable Document Format Download
Publication available in collections:	Conference contributions

Date