Publication:

Impact of Structural and Process Variations on the Time-Dependent OFF-State Breakdown of p-GaN Power HEMTs

Date

2021
Journal article
https://doi.org/10.1109/TDMR.2020.3048274
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dc.contributor.authorMillesimo, M.
dc.contributor.authorTallarico, A. N.
dc.contributor.authorPosthuma, Niels
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorBorga, Matteo
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorBorga, Matteo
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecBorga, Matteo::0000-0003-3087-6612
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2022-02-24T16:22:59Z
dc.date.available2022-02-24T16:22:59Z
dc.date.issued2021
dc.identifier.doi10.1109/TDMR.2020.3048274
dc.identifier.issn1530-4388
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/39129
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage57
dc.source.endpage63
dc.source.issue1
dc.source.journalIEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
dc.source.numberofpages7
dc.source.volume21
dc.subject.keywordsCHIP ESD PROTECTION
dc.subject.keywordsHOLDING-VOLTAGE
dc.subject.keywordsSCR DEVICE
dc.subject.keywordsDESIGN
dc.title

Impact of Structural and Process Variations on the Time-Dependent OFF-State Breakdown of p-GaN Power HEMTs

dc.typeJournal article
dspace.entity.typePublication
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