Time series modeling of the cycle-to-cycle variability in h-BN based memristors

dc.contributor.author	Roldan, J. B.
dc.contributor.author	Maldonado, D.
dc.contributor.author	Alonso, F. J.
dc.contributor.author	Roldan, A. M.
dc.contributor.author	Hui, F.
dc.contributor.author	Jimenez-Molinos, F.
dc.contributor.author	Aguilera, A. M.
dc.contributor.author	Lanza, M.
dc.contributor.author	Shi, Yuanyuan
dc.contributor.imecauthor	Shi, Y.
dc.contributor.imecauthor	Shi, Yuanyuan
dc.contributor.orcidimec	Shi, Yuanyuan::0000-0002-4836-6752
dc.date.accessioned	2021-12-07T08:33:15Z
dc.date.available	2021-11-02T15:58:34Z
dc.date.available	2021-12-07T08:33:15Z
dc.date.issued	2021
dc.identifier.doi	10.1109/IRPS46558.2021.9405100
dc.identifier.eisbn	978-1-7281-6893-7
dc.identifier.issn	1541-7026
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/37693
dc.publisher	IEEE
dc.source.conference	IEEE International Reliability Physics Symposium (IRPS)
dc.source.conferencedate	MAR 21-24, 2021
dc.source.conferencelocation	Monterey, CA, USA
dc.source.journal	na
dc.source.numberofpages	5
dc.subject.keywords	RESISTIVE SWITCHING MEMORY
dc.subject.keywords	DEVICE
dc.title	Time series modeling of the cycle-to-cycle variability in h-BN based memristors
dc.type	Proceedings paper
dspace.entity.type	Publication
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