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A proper approach to characterize retention-after-cycling in 3D-Flash devices

Date

2013
Proceedings Paper
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dc.contributor.authorQiao, Fengying
dc.contributor.authorArreghini, Antonio
dc.contributor.authorBlomme, Pieter
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorPan, Liyang
dc.contributor.authorXu, Jun
dc.contributor.authorVan Houdt, Jan
dc.contributor.imecauthorArreghini, Antonio
dc.contributor.imecauthorBlomme, Pieter
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecArreghini, Antonio::0000-0002-7493-9681
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.accessioned2021-10-21T11:09:45Z
dc.date.available2021-10-21T11:09:45Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22964
dc.source.beginpage187
dc.source.conferenceInternational Conference on Microelectronics Test Structures - ICMTS
dc.source.conferencedate25/03/2013
dc.source.conferencelocationOsaka Japan
dc.source.endpage191
dc.title

A proper approach to characterize retention-after-cycling in 3D-Flash devices

dc.typeProceedings paper
dspace.entity.typePublication
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