Publication:

Heavily doping technology for strained Ge1-xSnx layers

Date

2010
Proceedings Paper
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dc.contributor.authorShimura, Yosuke
dc.contributor.authorTakeuchi, Shotaro
dc.contributor.authorVincent, Benjamin
dc.contributor.authorEneman, Geert
dc.contributor.authorClarysse, Trudo
dc.contributor.authorVantomme, Andre
dc.contributor.authorDekoster, Johan
dc.contributor.authorCaymax, Matty
dc.contributor.authorLoo, Roger
dc.contributor.authorNakatsuka, Osamu
dc.contributor.authorZaima, Shigeaki
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-18T21:30:36Z
dc.date.available2021-10-18T21:30:36Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17978
dc.source.conference71st Fall Meeting of the Japan Society of Applied Physics
dc.source.conferencedate14/09/2010
dc.source.conferencelocationNagasaki Japan
dc.title

Heavily doping technology for strained Ge1-xSnx layers

dc.typeProceedings paper
dspace.entity.typePublication
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