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Cost effective implementation of a 90 V RESURF P-type drain extended MOS in a 0.35 μm based smart power technology
Publication:
Cost effective implementation of a 90 V RESURF P-type drain extended MOS in a 0.35 μm based smart power technology
Date
2002
Proceedings Paper
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6313.pdf
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Bakeroot, Benoit
;
Vermandel, Miguel
;
Moens, P.
;
Doutreloigne, Jan
;
Bolognesi, D.
Journal
Abstract
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1
since deposited on 2021-10-14
Acq. date: 2025-10-29
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1973
since deposited on 2021-10-14
Acq. date: 2025-10-29
Citations
Metrics
Downloads
1
since deposited on 2021-10-14
Acq. date: 2025-10-29
Views
1973
since deposited on 2021-10-14
Acq. date: 2025-10-29
Citations