Publication:

In situ phosphorus-doped polycrystalline silicon films by low pressure chemical vapor deposition for contact passivation of silicon solar cells

Date

2022-01-01
Journal article
https://doi.org/10.1016/j.solener.2021.11.045
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dc.contributor.authorFirat, Meric
dc.contributor.authorPayo, Maria Recaman
dc.contributor.authorDuerinckx, Filip
dc.contributor.authorTous, Loic
dc.contributor.authorPoortmans, Jef
dc.contributor.authorSivaramakrishnan Radhakrishnan, Hariharsudan
dc.contributor.imecauthorFirat, Meric
dc.contributor.imecauthorRadhakrishnan, Hariharsudan Sivaramakrishnan
dc.contributor.imecauthorDuerinckx, Filip
dc.contributor.imecauthorTous, Loic
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.imecauthorSivaramakrishnan Radhakrishnan, Hariharsudan
dc.contributor.orcidimecFirat, Meric::0000-0002-6509-9668
dc.contributor.orcidimecDuerinckx, Filip::0000-0003-2570-7371
dc.contributor.orcidimecTous, Loic::0000-0001-9928-7774
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.contributor.orcidimecSivaramakrishnan Radhakrishnan, Hariharsudan::0000-0003-1963-273X
dc.date.accessioned2022-03-23T10:54:47Z
dc.date.available2022-02-15T10:15:05Z
dc.date.available2022-03-23T10:54:47Z
dc.date.issued2022-01-01
dc.description.wosFundingTextThe authors would like to acknowledge Rajiv Sharma from KU Leuven for his help with the interfacial oxide development, Sukhvinder Singh and Patrick Choulat from Imec for their help with the contact resistivity measurements and sample fabrication, Thomas Nuytten andStefanie Sergeant from Imec for the Raman spectroscopy measurements, Bastien Douhard and Mustafa Ayyad from Imec for SIMS measurements, Maxim Korytov, Laura Nelissen, and Patricia van Marcke from Imec for the TEM specimen preparation and measurements, and Janusz Bogda-nowicz from Imec for his help with the analysis of the Hall measurement data. This work was supported by the European Union's Horizon2020 Programme for research, technological development, and demonstra-tion [grant number 857793] ; and by the Kuwait for the Advancement of Sciences [grant number CN18-15EE-01] .
dc.identifier.doi10.1016/j.solener.2021.11.045
dc.identifier.issn0038-092X
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/38860
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD
dc.source.beginpage78
dc.source.endpage87
dc.source.issueJanuary
dc.source.journalSOLAR ENERGY
dc.source.numberofpages10
dc.source.volume231
dc.subject.disciplineEnergy & fuels
dc.subject.keywordsphotovoltaics
dc.subject.keywordspassivating contacts
dc.title

In situ phosphorus-doped polycrystalline silicon films by low pressure chemical vapor deposition for contact passivation of silicon solar cells

dc.typeJournal article
dspace.entity.typePublication
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