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A new 2 isolated-bits/cell Flash memory device with self aligned split gate structure using ONO stacks for charge storage
Publication:
A new 2 isolated-bits/cell Flash memory device with self aligned split gate structure using ONO stacks for charge storage
Date
2003
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Breuil, Laurent
;
Schuler, Franz
;
Haspeslagh, Luc
;
Wellekens, Dirk
;
De Vos, Joeri
;
Lorenzini, Martino
;
Van Houdt, Jan
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2091
since deposited on 2021-10-15
Acq. date: 2025-10-23
Citations
Metrics
Views
2091
since deposited on 2021-10-15
Acq. date: 2025-10-23
Citations