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Electron spin resonance observation of Si dangling bond type defects at the interface (100)Si and ultrathin stacks of SiO2, Al2O3, and ZrO2

Date

2001
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dc.contributor.authorStesmans, Andre
dc.contributor.authorAfanas'ev, V. V.
dc.contributor.authorHoussa, Michel
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorHoussa, Michel
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.date.accessioned2021-10-14T17:53:25Z
dc.date.available2021-10-14T17:53:25Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5676
dc.source.conference31st IEEE Semiconductor Interface Specialists Conference; 7-9 December 2001; San Diego, CA, USA.
dc.source.conferencelocation
dc.title

Electron spin resonance observation of Si dangling bond type defects at the interface (100)Si and ultrathin stacks of SiO2, Al2O3, and ZrO2

dc.typeOral presentation
dspace.entity.typePublication
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