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Excellent stability of GaN-on-Si high electron mobility transistors with 5 μm gate/drain spacing tested in off-state at a record drain voltage of 200 V and 200 °C

Date

2010
Journal article
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dc.contributor.authorMarcon, Denis
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorVisalli, Domenica
dc.contributor.authorDerluyn, Joff
dc.contributor.authorDas, Jo
dc.contributor.authorMedjdoub, Farid
dc.contributor.authorDegroote, Stefan
dc.contributor.authorLeys, Maarten
dc.contributor.authorCheng, Kai
dc.contributor.authorMertens, Robert
dc.contributor.authorGermain, Marianne
dc.contributor.authorBorghs, Gustaaf
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorMertens, Robert
dc.contributor.imecauthorBorghs, Gustaaf
dc.date.accessioned2021-10-18T18:46:46Z
dc.date.available2021-10-18T18:46:46Z
dc.date.issued2010
dc.identifier.issn0021-4922
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17573
dc.identifier.urlhttp://jjap.ipap.jp/link?JJAP/49/04DF07/
dc.source.beginpage04DF07
dc.source.issue4
dc.source.journalJapanese Journal of Applied Physics
dc.source.volume49
dc.title

Excellent stability of GaN-on-Si high electron mobility transistors with 5 μm gate/drain spacing tested in off-state at a record drain voltage of 200 V and 200 °C

dc.typeJournal article
dspace.entity.typePublication
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