Publication:

AlN/GaN heterostructures grown by metal organic vapor phase epitaxy with in situ Si3N4 passivation

Date

2011
Journal article
Simple item page Full metadata Statistics
 
dc.contributor.authorCheng, Kai
dc.contributor.authorDegroote, Stefan
dc.contributor.authorLeys, Maarten
dc.contributor.authorMedjdoub, Farid
dc.contributor.authorDerluyn, Joff
dc.contributor.authorSijmus, Bram
dc.contributor.authorGermain, Marianne
dc.contributor.authorBorghs, Gustaaf
dc.contributor.imecauthorBorghs, Gustaaf
dc.date.accessioned2021-10-19T12:46:08Z
dc.date.available2021-10-19T12:46:08Z
dc.date.issued2011
dc.identifier.issn0022-0248
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18669
dc.source.beginpage204
dc.source.endpage207
dc.source.issue1
dc.source.journalJournal of Crystal Growth
dc.source.volume315
dc.title

AlN/GaN heterostructures grown by metal organic vapor phase epitaxy with in situ Si3N4 passivation

dc.typeJournal article
dspace.entity.typePublication
Files
Publication available in collections:
Articles