Publication:

Perspectives on GaN MISHEMT Power Amplifier versus Positive Gate Bias Instability

Date

2025
Proceedings Paper
https://doi.org/10.1109/IRPS48204.2025.10983812
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dc.contributor.authorYu, Hao
dc.contributor.authorElKashlan, Rana
dc.contributor.authorTsai, M. -C.
dc.contributor.authorYang, Y.
dc.contributor.authorGuenach, M.
dc.contributor.authorKuo, Ying-Chun
dc.contributor.authorYadav, Sachin
dc.contributor.authorO'Sullivan, Barry
dc.contributor.authorRathi, Aarti
dc.contributor.authorGupta, Amratansh
dc.contributor.authorXiao, Dongping
dc.contributor.authorDesset, Claude
dc.contributor.authorAlian, AliReza
dc.contributor.authorPeralagu, Uthayasankaran
dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorWu, T. -L.
dc.contributor.authorParvais, Bertrand
dc.contributor.authorCollaert, Nadine
dc.date.accessioned2026-04-23T11:53:55Z
dc.date.available2026-04-23T11:53:55Z
dc.date.createdwos2025-10-18
dc.date.issued2025
dc.description.abstractIn this work, we discuss whether a positive gate bias instability (Delta Vth) issue hampers a GaN MISHEMT in power amplifier (PA) applications. Two aspects are evaluated: (1) the safe gate modulation range of a GaN MISHEMT that is free of Delta Vth, and (2) the gate modulation range of a PA in linear operation. The analysis shows that the two ranges have a significant overlap, meaning that a linearly operating MISHEMT PA can be well designed to avoid the positive Delta Vth issue.
dc.description.wosFundingTextImec ARF program members, European commission and local authorities, the imec pilot line and Amsimec (test lab) are gratefully acknowledged for their support. Dr. Ming Zhao is gratefully acknowledged for his contribution to III-N epitaxy.
dc.identifier.doi10.1109/IRPS48204.2025.10983812
dc.identifier.isbn979-8-3315-0478-6
dc.identifier.issn1541-7026
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/59182
dc.language.isoeng
dc.provenance.editstepusergreet.vanhoof@imec.be
dc.publisherIEEE
dc.source.conferenceIEEE International Reliability Physics Symposium (IRPS)
dc.source.conferencedate2025-03-30
dc.source.conferencelocationMonterey
dc.source.journal2025 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS
dc.source.numberofpages6
dc.title

Perspectives on GaN MISHEMT Power Amplifier versus Positive Gate Bias Instability

dc.typeProceedings paper
dspace.entity.typePublication
imec.internal.crawledAt2025-10-22
imec.internal.sourcecrawler
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