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Cathodoluminescence from InGaN/GaN MQW grown on an epitaxially lateral overgrown GaN epilayer

Date

1999
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dc.contributor.authorTrager-Cowan, C.
dc.contributor.authorMohammed, A.
dc.contributor.authorManson-Smith, S. K.
dc.contributor.authorO'Donnell, K. P.
dc.contributor.authorJacobs, Koen
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorDemeester, Piet
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.imecauthorDemeester, Piet
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.contributor.orcidimecDemeester, Piet::0000-0003-2810-3899
dc.date.accessioned2021-10-14T11:43:31Z
dc.date.available2021-10-14T11:43:31Z
dc.date.embargo9999-12-31
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3884
dc.source.conference3rd International Conference on Nitride Semiconductors - ICNS3
dc.source.conferencedate4/07/1999
dc.source.conferencelocationMontpellier France
dc.title

Cathodoluminescence from InGaN/GaN MQW grown on an epitaxially lateral overgrown GaN epilayer

dc.typeOral presentation
dspace.entity.typePublication
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