Publication:

Band alignment at interfaces of amorphous Al2O3 with Ge1-xSnx-strained Ge-based channels

Date

2014
Journal article
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dc.contributor.authorChou, H.-Y
dc.contributor.authorAfanas'ev, Valeri
dc.contributor.authorHoussa, Michel
dc.contributor.authorStesmans, Andre
dc.contributor.authorVincent, Benjamin
dc.contributor.authorGencarelli, Federica
dc.contributor.authorShimura, Yosuke
dc.contributor.authorMerckling, Clement
dc.contributor.authorLoo, Roger
dc.contributor.authorNakatsuka, Osamu
dc.contributor.authorZaima, Shigeaki
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-22T00:58:14Z
dc.date.available2021-10-22T00:58:14Z
dc.date.embargo9999-12-31
dc.date.issued2014
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23652
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6821252&sortType%3Ddesc_p_Publication_Year%26queryText%3Dmercklin
dc.source.beginpage202107
dc.source.issue20
dc.source.journalApplied Physics Letters
dc.source.volume104
dc.title

Band alignment at interfaces of amorphous Al2O3 with Ge1-xSnx-strained Ge-based channels

dc.typeJournal article
dspace.entity.typePublication
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