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A comparative study of the oxide breakdown in short-channel nMOSFETs and pMOSFETs stressed in inversion and in accumulation regimes
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A comparative study of the oxide breakdown in short-channel nMOSFETs and pMOSFETs stressed in inversion and in accumulation regimes
Date
2003
Journal article
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Crupi, F.
;
Kaczer, Ben
;
Degraeve, Robin
;
De Keersgieter, An
;
Groeseneken, Guido
Journal
IEEE Trans. Device and Materials Reliability
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2082
since deposited on 2021-10-15
Acq. date: 2025-10-23
Citations
Metrics
Views
2082
since deposited on 2021-10-15
Acq. date: 2025-10-23
Citations