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Influence of the sidewall crystal orientation, HfSiO nitridation and TiN metal gate thickness on n-MuGFETs under analog operation
Publication:
Influence of the sidewall crystal orientation, HfSiO nitridation and TiN metal gate thickness on n-MuGFETs under analog operation
Date
2011
Journal article
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Rodrigues, M.
;
Galeti, M.
;
Martino, J.A.
;
Collaert, Nadine
;
Simoen, Eddy
;
Claeys, Cor
Journal
Solid-State Electronics
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1853
since deposited on 2021-10-19
Acq. date: 2025-12-09
Citations
Metrics
Views
1853
since deposited on 2021-10-19
Acq. date: 2025-12-09
Citations