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Trapping in GaN-based MIS-HEMTs: role of high drain bias and hot electrons

Date

2014
Journal article
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dc.contributor.authorMeneghini, Matteo
dc.contributor.authorBisi, Davide
dc.contributor.authorMarcon, Denis
dc.contributor.authorStoffels, Steve
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorWu, Tian-Li
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorMeneghesso, Gaudio
dc.contributor.authorZanoni, Enrico
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-22T03:43:38Z
dc.date.available2021-10-22T03:43:38Z
dc.date.issued2014
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24241
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/104/14/10.1063/1.4869680
dc.source.beginpage143505
dc.source.issue14
dc.source.journalApplied Physics Letters
dc.source.volume104
dc.title

Trapping in GaN-based MIS-HEMTs: role of high drain bias and hot electrons

dc.typeJournal article
dspace.entity.typePublication
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