Publication:

New technique for forming continuous, smooth and uniform ultrathin (3nm) PtSi layers

Date

1999
Journal article
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dc.contributor.authorAlves Donaton, Ricardo
dc.contributor.authorJin, S.
dc.contributor.authorBender, Hugo
dc.contributor.authorConard, Thierry
dc.contributor.authorDe Wolf, Ingrid
dc.contributor.authorMaex, Karen
dc.contributor.authorVantomme, Andre
dc.contributor.authorLangouche, G.
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorDe Wolf, Ingrid
dc.contributor.imecauthorMaex, Karen
dc.contributor.imecauthorVantomme, Andre
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.date.accessioned2021-10-06T10:40:53Z
dc.date.available2021-10-06T10:40:53Z
dc.date.embargo9999-12-31
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3181
dc.source.beginpage195
dc.source.endpage197
dc.source.issue4
dc.source.journalElectrochemical and Solid State Letters
dc.source.volume2
dc.title

New technique for forming continuous, smooth and uniform ultrathin (3nm) PtSi layers

dc.typeJournal article
dspace.entity.typePublication
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