Publication:

Formation of CoSi2 on strained Si0.8Ge0.2 using a sacrificial Si layer

Date

1995
Journal article
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dc.contributor.authorAlves Donaton, Ricardo
dc.contributor.authorKolodinski, Sabine
dc.contributor.authorCaymax, Matty
dc.contributor.authorRoussel, Philippe
dc.contributor.authorBender, Hugo
dc.contributor.authorBrijs, Bert
dc.contributor.authorMaex, Karen
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorMaex, Karen
dc.date.accessioned2021-09-29T13:05:58Z
dc.date.available2021-09-29T13:05:58Z
dc.date.embargo9999-12-31
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/632
dc.source.beginpage77
dc.source.endpage81
dc.source.journalApplied Surface Science
dc.source.volume91
dc.title

Formation of CoSi2 on strained Si0.8Ge0.2 using a sacrificial Si layer

dc.typeJournal article
dspace.entity.typePublication
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