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Understanding the potential and the limits of germanium pMOSFETs for VLSI circuits from experimental measurements

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dc.contributor.authorMagnone, P.
dc.contributor.authorCrupi, Felice
dc.contributor.authorAlioto, M.
dc.contributor.authorKaczer, Ben
dc.contributor.authorDe Jaeger, Brice
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.date.accessioned2021-10-19T15:51:22Z
dc.date.available2021-10-19T15:51:22Z
dc.date.embargo9999-12-31
dc.date.issued2011
dc.identifier.issn1063-8210
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19354
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=5508322
dc.source.beginpage1569
dc.source.endpage1582
dc.source.issue9
dc.source.journalIEEE Transactions on Very Large Scale Integration (VLSI) Systems
dc.source.volume19
dc.title

Understanding the potential and the limits of germanium pMOSFETs for VLSI circuits from experimental measurements

dc.typeJournal article
dspace.entity.typePublication
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