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On the origin of the two-dimensional electron gas at AlGaN/GaN at AlGaN/GaN heterojunctions and its influence on gate-recessed MISHEMTs - A TCAD study
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1895 since deposited on 2021-10-22
1last month
Acq. date: 2026-03-16
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Views
1895 since deposited on 2021-10-22
1last month
Acq. date: 2026-03-16
Citations