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Growth of InN on Ge(111) by molecular beam Epitaxy using a GaN buffer
Publication:
Growth of InN on Ge(111) by molecular beam Epitaxy using a GaN buffer
Date
2007
Presentation
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Lieten, Ruben
;
Degroote, Stefan
;
Kuijk, Maarten
;
Borghs, Gustaaf
Journal
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1921
since deposited on 2021-10-16
Acq. date: 2025-10-25
Citations
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Views
1921
since deposited on 2021-10-16
Acq. date: 2025-10-25
Citations