Publication:

P-N junction diode fabricated based on donor formation in plasma hydrogenated P-type czochralski silicon

Date

2005
Proceedings Paper
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dc.contributor.authorHuang, Y.L.
dc.contributor.authorJob, R.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorMa, Y.
dc.contributor.authorDungen, W.
dc.contributor.authorFahrner, W.R.
dc.contributor.authorVersluijs, Janko
dc.contributor.authorClauws, P.
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorVersluijs, Janko
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-16T02:12:14Z
dc.date.available2021-10-16T02:12:14Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10619
dc.source.beginpageE9.26
dc.source.conferenceSemiconductor Defect Engineering - Materials, Synthetic Structures, and Devices
dc.source.conferencedate28/03/2005
dc.source.conferencelocationSan Francisco USA
dc.title

P-N junction diode fabricated based on donor formation in plasma hydrogenated P-type czochralski silicon

dc.typeProceedings paper
dspace.entity.typePublication
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