Publication:

Transistors based on two-dimensional materials for future integrated circuits

Date

2021
Journal Article Review
https://doi.org/10.1038/s41928-021-00670-1
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dc.contributor.authorDas, Saptarshi
dc.contributor.authorSebastian, Amritanand
dc.contributor.authorPop, Eric
dc.contributor.authorMcClellan, Connor J.
dc.contributor.authorFranklin, Aaron D.
dc.contributor.authorGrasser, Tibor
dc.contributor.authorKnobloch, Theresia
dc.contributor.authorIllarionov, Yury
dc.contributor.authorPenumatcha, Ashish V.
dc.contributor.authorAppenzeller, Joerg
dc.contributor.authorChen, Zhihong
dc.contributor.authorZhu, Wenjuan
dc.contributor.authorAsselberghs, Inge
dc.contributor.authorLi, Lain-Jong
dc.contributor.authorAvci, Uygar E.
dc.contributor.authorBhat, Navakanta
dc.contributor.authorAnthopoulos, Thomas D.
dc.contributor.authorSingh, Rajendra
dc.contributor.imecauthorAsselberghs, Inge
dc.date.accessioned2022-06-28T14:15:22Z
dc.date.available2021-12-06T02:07:01Z
dc.date.available2022-05-13T08:54:11Z
dc.date.available2022-06-28T14:15:22Z
dc.date.issued2021
dc.identifier.doi10.1038/s41928-021-00670-1
dc.identifier.issn2520-1131
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/38569
dc.publisherNATURE PORTFOLIO
dc.source.beginpage786
dc.source.endpage799
dc.source.issue11
dc.source.journalNATURE ELECTRONICS
dc.source.numberofpages14
dc.source.volume4
dc.subject.keywordsFIELD-EFFECT TRANSISTORS
dc.subject.keywordsATOMIC LAYER DEPOSITION
dc.subject.keywordsHEXAGONAL BORON-NITRIDE
dc.subject.keywordsHIGH-KAPPA DIELECTRICS
dc.subject.keywordsMONOLAYER MOS2
dc.subject.keywordsELECTRON-MOBILITY
dc.subject.keywordsMOLYBDENUM-DISULFIDE
dc.subject.keywordsPERFORMANCE LIMITS
dc.subject.keywordsCONTACT RESISTANCE
dc.subject.keywordsSCALE LENGTH
dc.title

Transistors based on two-dimensional materials for future integrated circuits

dc.typeJournal article review
dspace.entity.typePublication
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