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Substantial Dose Reduction Using Dry Deposited Underlayer for EUV Lithography While Maintaining Roughness and Minimizing Defects

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dc.contributor.authorKundu, Achintya
dc.contributor.authorGupta, Mihir
dc.contributor.authorDe Simone, Danilo
dc.contributor.authorVanelderen, Pieter
dc.contributor.authorSuh, Hyo Seon
dc.contributor.authorDe Roest, David
dc.contributor.authorChristy, Dennis
dc.contributor.authorDavodi, Fatemeh
dc.contributor.authorPatel, Kishan
dc.contributor.authorWallace, Steaphan
dc.contributor.authorSun, Yiting
dc.contributor.authorTomczak, Yoann
dc.contributor.imecauthorKundu, Achintya
dc.contributor.imecauthorGupta, Mihir
dc.contributor.imecauthorDe Simone, Danilo
dc.contributor.imecauthorVanelderen, Pieter
dc.contributor.imecauthorSuh, Hyo Seon
dc.contributor.orcidimecKundu, Achintya::0000-0002-6252-1763
dc.contributor.orcidimecGupta, Mihir::0000-0003-0286-7997
dc.contributor.orcidimecDe Simone, Danilo::0000-0003-3927-5207
dc.contributor.orcidimecVanelderen, Pieter::0009-0008-3347-0072
dc.contributor.orcidimecSuh, Hyo Seon::0000-0003-4370-5062
dc.date.accessioned2025-06-17T11:57:01Z
dc.date.available2025-05-11T05:43:40Z
dc.date.available2025-06-17T11:57:01Z
dc.date.issued2024
dc.identifier.doi10.1117/12.3034575
dc.identifier.eisbn978-1-5106-8156-9
dc.identifier.isbn978-1-5106-8155-2
dc.identifier.issn0277-786X
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/45645
dc.publisherSPIE-INT SOC OPTICAL ENGINEERING
dc.source.beginpageArt. 132150M
dc.source.conference2024 International Conference on Extreme Ultraviolet Lithography
dc.source.conferencedateSEP 30-OCT 03, 2024
dc.source.conferencelocationMonterey
dc.source.journalProceedings of SPIE
dc.source.numberofpages6
dc.source.volume13215
dc.title

Substantial Dose Reduction Using Dry Deposited Underlayer for EUV Lithography While Maintaining Roughness and Minimizing Defects

dc.typeProceedings paper
dspace.entity.typePublication
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