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A novel model for boron diffusion in SiGe strained layers based on a kinetic driven Ge-B pairing mechanism
Publication:
A novel model for boron diffusion in SiGe strained layers based on a kinetic driven Ge-B pairing mechanism
Date
2001
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Villaneuva, D.
;
Moens, P.
;
Krishnasamy, Rajendran
;
Schoenmaker, Wim
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1963
since deposited on 2021-10-14
4
last month
Acq. date: 2025-12-08
Citations
Metrics
Views
1963
since deposited on 2021-10-14
4
last month
Acq. date: 2025-12-08
Citations