Publication:

A novel model for boron diffusion in SiGe strained layers based on a kinetic driven Ge-B pairing mechanism

Date

2001

Proceedings Paper

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Author(s)

;

;

Krishnasamy, Rajendran

;

Schoenmaker, Wim

Statistics

1963 since deposited on 2021-10-14

Acq. date: 2026-01-26