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Cathodoluminescence from an InGaN/GaN MQW grown on an epitaxially laterally overgrown GaN epilayer

Date

1999
Journal article
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dc.contributor.authorTrager-Cowan, C.
dc.contributor.authorOsborne, I.
dc.contributor.authorBarisonzi, M.
dc.contributor.authorManson-Smith, S. K.
dc.contributor.authorO'Donnell, K. P.
dc.contributor.authorJacobs, Koen
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorDemeester, Piet
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.imecauthorDemeester, Piet
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.contributor.orcidimecDemeester, Piet::0000-0003-2810-3899
dc.date.accessioned2021-10-14T11:43:36Z
dc.date.available2021-10-14T11:43:36Z
dc.date.embargo9999-12-31
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3885
dc.source.beginpage347
dc.source.endpage350
dc.source.issue1
dc.source.journalPhysica Status Solidi B
dc.source.volume216
dc.title

Cathodoluminescence from an InGaN/GaN MQW grown on an epitaxially laterally overgrown GaN epilayer

dc.typeJournal article
dspace.entity.typePublication
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