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Monolithic transimpedance amplifier design for large, photodiode capacitance and wide temperature range

Date

2005-12
Proceedings Paper
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dc.contributor.authorDe Ridder, Tine
dc.contributor.authorYin, X.
dc.contributor.authorOssieur, Peter
dc.contributor.authorQiu, Xing Zhi
dc.contributor.authorVandewege, Jan
dc.contributor.authorChasles, O
dc.contributor.authorDevos, A
dc.contributor.authorDe Pauw, P
dc.contributor.imecauthorOssieur, Peter
dc.contributor.orcidimecOssieur, Peter::0000-0002-8737-9142
dc.date.accessioned2021-10-16T01:11:10Z
dc.date.available2021-10-16T01:11:10Z
dc.date.issued2005-12
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10319
dc.source.beginpage245
dc.source.conference10th Annual Symposium of the IEEE/LEOS Benelux Chapter
dc.source.conferencedate1/12/2005
dc.source.conferencelocationMons Belgium
dc.source.endpage248
dc.title

Monolithic transimpedance amplifier design for large, photodiode capacitance and wide temperature range

dc.typeProceedings paper
dspace.entity.typePublication
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