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Cryogenic performance of ultrathin oxide CMOS capacitors with in situ doped p+ poly-Si1-xGex and poly Si gate materials
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Cryogenic performance of ultrathin oxide CMOS capacitors with in situ doped p+ poly-Si1-xGex and poly Si gate materials
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Date
2002
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Jacob, A.P.
;
Myrberg, T.
;
Nur, O.
;
Lundgren, P.
;
Sveinbjornsson, E.O.
;
Ye, L.L.
;
Tholen, A.
;
Caymax, Matty
Journal
Semiconductor Science and Technology
Abstract
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1999
since deposited on 2021-10-14
4
last month
Acq. date: 2025-12-10
Citations
Metrics
Views
1999
since deposited on 2021-10-14
4
last month
Acq. date: 2025-12-10
Citations